Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN

被引：72
|
作者：
Watanabe, K [1 ]
Yang, JR
Huang, SY
Inoke, K
Hsu, JT
Tu, RC
Yamazaki, T
Nakanishi, N
Shiojiri, M
机构：
[1] Tokyo Metropolitan Coll Technol, Tokyo 1400011, Japan
[2] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan
[3] FEI Co Japan, Tokyo 1088509, Japan
[4] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan
[5] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan
[6] Kanazawa Med Univ, Dept Anat, Kanazawa, Ishikawa 9200293, Japan
[7] Kyoto Inst Technol, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期
关键词：
D O I：
10.1063/1.1542683
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have determined the structure of inverted hexagonal pyramid defects (IHPs) in multiple quantum wells InGaN/GaN by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). HAADF STEM images reveal definitely that the IHP nucleates at a threading dislocation and grows in the form of a thin six-walled structure with InGaN/GaN {10 (1) over bar1} layers. It has been found that IHPs start even at In-rich dots under adverse growth conditions. (C) 2003 American Institute of Physics.
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页码：718 / 720
页数：3
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