A novel monolithic pixel detector implemented in high-voltage CMOS technology

被引：15
|
作者：
Peric, Ivan [1 ]
机构：
[1] Univ Mannheim, Inst Comp Sci, Mannheim, Germany
来源：
2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11 | 2007年
关键词：
D O I：
10.1109/NSSMIC.2007.4437188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Novel concept for monolithic pixelated particle detector with 100 % fill-factor will be presented. The detection is based on the charge drift in the depleted zone of the reverse biased diode. Pixel electronics, which includes amplifier, discriminator, threshold-tune DAC and a digital storage cell, is placed inside the cathode of the sensor (N-well). Two test chips with different pixel matrices and test structures have been fabricated in a 0.35 mu m high-voltage CMOS process. The results of the electrical tests and measurements with radioactive sources will be presented.
引用
收藏
页码：1033 / 1039
页数：7
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