Progress in Development of Monolithic Active Pixel Detector for X-ray Astronomy with SOI CMOS Technology

被引：20

作者：

Nakashima, Shinya ^{[1
]}

Ryu, Syukyo Gando ^{[1
]}

Tsuru, Takeshi Go ^{[1
]}

Takeda, Ayaki

Arai, Yasuo ^{[3
]}

Miyoshi, Toshinobu ^{[2
,3
]}

Ichimiya, Ryo ^{[3
]}

Ikemoto, Yukiko ^{[3
]}

Imamura, Toshifumi ^{[4
]}

Ohmoto, Takafumi ^{[4
]}

Iwata, Atsushi ^{[4
]}

机构：

[1] Kyoto Univ, Dept Phys, Grad Sch Sci, Sakyo Ku, Kitashirakawa Oiwake Cho, Kyoto 6068502, Japan

[2] Grad Univ Adv Studies SOKENDAI, High Energy Accelerator Res Org KEK, Grad Sch High Energy Accelerator Sci, Dept Particle & Nucl Phys, Tsukuba, Ibaraki 3050801, Japan

[3] KEK, High Energy Accelerator Res Org, Inst Particle & Nucl Studies, Tsukuba, Ibaraki 3050801, Japan

[4] A R Tec Corp, Hiroshima 7390046, Japan

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON TECHNOLOGY AND INSTRUMENTATION IN PARTICLE PHYSICS (TIPP 2011) | 2012年 / 37卷

关键词：

SOI; pixel; X-ray imaging; X-ray spectroscopy; SPECTROMETER;

D O I：

10.1016/j.phpro.2012.04.100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have been developing an active pixel sensor for X-ray astronomy. In this paper, we report on the design and the characterization of the recently-developed device named XRPIX1-FZ. We applied the high-resistivity Si wafer (similar to 7 k Omega cm) to the sensor layer for a thick depletion layer. The chemical-mechanical polishing, which we applied to smooth the rough backside of the Si wafer, successfully reduced the dark current. We used the single-pixel readout mode and achieved the energy resolution of 260 eV in FWHM at 8 keV. Moreover, we developed the 3 x 3 pixel readout mode for the evaluation of split events and confirmed the full depletion of 250 mu m thick at the reverse-bias voltage of 30 V. (C) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of the organizing committee for TIPP 11.

引用

页码：1373 / 1380

页数：8

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