A novel monolithic pixel detector implemented in high-voltage CMOS technology

被引：15
|
作者：
Peric, Ivan [1 ]
机构：
[1] Univ Mannheim, Inst Comp Sci, Mannheim, Germany
来源：
2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11 | 2007年
关键词：
D O I：
10.1109/NSSMIC.2007.4437188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Novel concept for monolithic pixelated particle detector with 100 % fill-factor will be presented. The detection is based on the charge drift in the depleted zone of the reverse biased diode. Pixel electronics, which includes amplifier, discriminator, threshold-tune DAC and a digital storage cell, is placed inside the cathode of the sensor (N-well). Two test chips with different pixel matrices and test structures have been fabricated in a 0.35 mu m high-voltage CMOS process. The results of the electrical tests and measurements with radioactive sources will be presented.
引用
收藏
页码：1033 / 1039
页数：7
相关论文
共 50 条
  • [41] A NOVEL CMOS-COMPATIBLE HIGH-VOLTAGE TRANSISTOR STRUCTURE
    PARPIA, Z
    MENA, JG
    SALAMA, CAT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) : 1948 - 1952
  • [42] Silicon pixel detector prototyping in SOI CMOS technology
    Dasgupta, Roma
    Bugiel, Szymon
    Idzik, Marek
    Kapusta, Piotr
    Kucewicz, Wojciech
    Turala, Michal
    ELECTRON TECHNOLOGY CONFERENCE 2016, 2016, 10175
  • [43] Efficiency and timing performance of the MUPIX7 high-voltage monolithic active pixel sensor
    Augustin, Heiko
    Berger, Niklaus
    Dittmeier, Sebastian
    Grzesik, Carsten
    Hammerich, Jan
    Hartenstein, Ulrich
    Huang, Qinhua
    Huth, Lennart
    Immig, David Maximilian
    Kiehn, Moritz
    Kozlinskiy, Alexandr
    Aeschbacher, Frank Meier
    Gonzalez, Annie Meneses
    Peric, Ivan
    Perrevoort, Ann-Kathrin
    Schoening, Andre
    Shrestha, Shruti
    vom Bruch, Dorothea
    Wauters, Frederik
    Wiedner, Dirk
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 902 : 158 - 163
  • [44] Novel high-voltage detector integrated into SPIC by using FFLR
    Han, Lei
    Ye, Xing-Ning
    Chen, Xing-Bi
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (10): : 1250 - 1254
  • [45] Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology
    Turchetta, R
    French, M
    Manolopoulos, S
    Tyndel, M
    Allport, P
    Bates, R
    O'Shea, V
    Hall, G
    Raymond, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 501 (01): : 251 - 259
  • [46] Temperature Sensors and Voltage References Implemented in CMOS Technology
    Meijer, Gerard C. M.
    Wang, Guijie
    Fruett, Fabiano
    IEEE SENSORS JOURNAL, 2001, 1 (03) : 225 - 234
  • [47] HIGH-VOLTAGE TECHNOLOGY
    WAGNER, H
    KUNSTSTOFFE-GERMAN PLASTICS, 1979, 69 (12): : 940 - 942
  • [48] A new single photon avalanche diode in CMOS high-voltage technology
    Xiao, Z.
    Pantic, D.
    Popovic, R. S.
    TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007,
  • [49] Monolithic active pixel detector in SOI technology preliminary results
    Niemiec, H
    Domanski, K
    Grabiec, P
    Grodner, M
    Jaroszewicz, B
    Klatka, T
    Kociubinski, A
    Koziel, M
    Kucewicz, W
    Kucharski, K
    Kuta, S
    Jasielski, J
    Marczewski, J
    Sapor, M
    Szelezniak, M
    Tomaszewski, D
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 209 - 212
  • [50] AN ANALOG TECHNOLOGY INTEGRATES BIPOLAR, CMOS, AND HIGH-VOLTAGE DMOS TRANSISTORS
    KRISHNA, S
    KUO, J
    GAETA, IS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 89 - 95
12345