The Simplest Modification of Cu Diffusion Barrier Dielectrics to Improve Cu/Low-k Interconnects Reliability

被引：0

作者：

Goto, Kinya ^{[1
]}

Oka, Yoshihiro ^{[1
]}

Suzumura, Naohito ^{[1
]}

Shibata, Ryuji ^{[1
]}

Furuhashi, Takahisa ^{[1
]}

Matsumoto, Masahiro ^{[1
]}

Kawamura, Takeshi ^{[1
]}

Matsuura, Masazumi ^{[1
]}

Fujisawa, Masahiko ^{[1
]}

Asai, Koyu ^{[1
]}

机构：

[1] Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition system without the complicated system and special source gases. And also, we propose a new hermeticity test procedure using TDS(Thermal Desorption Spectroscopy).

引用

页数：3

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