The Simplest Modification of Cu Diffusion Barrier Dielectrics to Improve Cu/Low-k Interconnects Reliability

被引：0

作者：

Goto, Kinya ^{[1
]}

Oka, Yoshihiro ^{[1
]}

Suzumura, Naohito ^{[1
]}

Shibata, Ryuji ^{[1
]}

Furuhashi, Takahisa ^{[1
]}

Matsumoto, Masahiro ^{[1
]}

Kawamura, Takeshi ^{[1
]}

Matsuura, Masazumi ^{[1
]}

Fujisawa, Masahiko ^{[1
]}

Asai, Koyu ^{[1
]}

机构：

[1] Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition system without the complicated system and special source gases. And also, we propose a new hermeticity test procedure using TDS(Thermal Desorption Spectroscopy).

引用

页数：3

共 50 条

[21] Study of CoTa alloy as barrier layer for Cu/low-k interconnects
Wang, Xu
Liu, Lin-Tao
He, Peng
Qu, Xin-Ping
Zhang, Jing
Wei, Shuhua
Mankelevich, Yuri A.
Baklanov, Mikhail R.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (40)
[22] Effect of Post-Annealing on Reliability of Cu/Low-k Interconnects
Cheng, Yi-Lung
Lee, Chih-Yen
Chen, Giin-Shan
Fang, Jau-Shiung
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (05)
[23] Electrical reliability issues of integrating low-K dielectrics with Cu metallization
Wu, ZC
Shiung, ZW
Wang, CC
Fang, KL
Wu, RG
Liu, YL
Tsui, BY
Chen, MC
Chang, W
Chou, PF
Jang, SM
Yu, CH
Liang, MS
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, : 82 - 84
[24] The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
Lloyd, J. R.
Murray, C. E.
Ponoth, S.
Cohen, S.
Liniger, E.
MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1643 - 1647
[25] Role of Cu in TDDB of low-k dielectrics
Lloyd, J. R.
Ponoth, S.
Liniger, E.
Cohen, S.
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 410 - +
[26] Electrical and reliability characterization of CuMn self forming barrier interconnects on low-k CDO dielectrics
Indukuri, Tejaswi K.
Akolkar, Rohan N.
Clarke, James S.
Genc, Arda
Gstrein, Florian
Harmes, Michael C.
Miner, Barbara
Xia, Feng
Zierath, Daniel J.
Balakrishnan, Sridhar
MICROELECTRONIC ENGINEERING, 2012, 92 : 49 - 52
[27] Low-K film containing no oxygen for barrier-free Cu interconnects
Fukuda, T
Aoi, N
Funaki, Y
Yanazawa, H
ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003), 2004, : 429 - 432
[28] Effects of active atomic sinks and reservoirs on the reliability of Cu/low-k interconnects
Wei, Frank L.
Hau-Riege, Christine S.
Marathe, Amit P.
Thompson, Carl V.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
[29] Barrier layer effects on electromigration reliability of Cu/Low k interconnects
Lu, X
Pyun, JW
Li, B
Henis, N
Neuman, K
Pfeifer, K
Ho, PS
PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2005, : 33 - 35
[30] Electromigration reliability of Cu/spin-on porous ultra low-k interconnects
Mosig, K
Blaschke, V
ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), 2001, : 427 - 432

← 1 2 3 4 5 →