The Simplest Modification of Cu Diffusion Barrier Dielectrics to Improve Cu/Low-k Interconnects Reliability

被引：0

作者：

Goto, Kinya ^{[1
]}

Oka, Yoshihiro ^{[1
]}

Suzumura, Naohito ^{[1
]}

Shibata, Ryuji ^{[1
]}

Furuhashi, Takahisa ^{[1
]}

Matsumoto, Masahiro ^{[1
]}

Kawamura, Takeshi ^{[1
]}

Matsuura, Masazumi ^{[1
]}

Fujisawa, Masahiko ^{[1
]}

Asai, Koyu ^{[1
]}

机构：

[1] Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition system without the complicated system and special source gases. And also, we propose a new hermeticity test procedure using TDS(Thermal Desorption Spectroscopy).

引用

页数：3

共 50 条

[31] Reliability improvement of 90nm-node Cu/Low-k interconnects
Matsumoto, S
Ishii, A
Tomito, K
Hashimoto, K
Nishioka, Y
Sekiguchi, M
Iwasaki, A
Sono, S
Satake, T
Okazaki, G
Fujisawa, M
Matsumoto, M
Yamamoto, S
Matsuura, M
PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2003, : 262 - 264
[32] Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm
Oates, Anthony S.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (01) : N3168 - N3176
[33] Electro-optical reliability characterization of advanced Cu/low-k interconnects
Guedj, C
Guillaumond, JF
Mondon, F
Arnaud, L
Arnal, J
Reinhold, J
Torres, J
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 584 - 585
[34] A Cu electroplating solution for porous Low-k/Cu damascene interconnects
Shimoyama, Masashi
Chikaki, Shinichi
Yagi, Ryotaro
Kohmura, Kazuo
Tanaka, Hirofumi
Fujii, Nobutoshi
Nakayama, Takahiro
Ono, Tetsuo
Ishikawa, Akira
Matsuo, Hisanori
Kinoshita, Keizo
Kikkawa, Takamaro
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (12) : D692 - D696
[35] Effects of fluoride residue on Cu agglomeration in Cu/low-k interconnects
Kobayashi, Y.
Ozaki, S.
Iba, Y.
Nakata, Y.
Nakamura, T.
MICROELECTRONIC ENGINEERING, 2011, 88 (05) : 620 - 622
[36] Reliability robustness of 65nm BEOL Cu damascene interconnects using porous CVD low-k dielectrics with k=2.2
Lin, KC
Lu, YC
Li, LP
Chen, BT
Chang, HL
Lu, HH
Jeng, SM
Jang, SM
Liang, MS
2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 66 - 67
[37] The transition to Cu, Damascene and low-K dielectrics for integrated circuit interconnects, impacts on the industry.
Monnig, KA
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2000, INTERNATIONAL CONFERENCE, 2001, 550 : 423 - 430
[38] Advanced Patterning Approaches for Cu/Low-k interconnects
Tsai, C. H.
Lee, C. J.
Huang, C. H.
Wu, Jay
Tien, H. W.
Yao, H. C.
Wang, Y. C.
Shue, S. L.
Cao, M.
2017 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2017,
[39] Mechanical stability of Cu/low-k BEOL Interconnects
Gonzalez, Mario
Vanstreels, Kris
Cherman, Vladimir
Croes, Kristof
Kljucar, Luka
De Wolf, Ingrid
Tokei, Zsolt
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
[40] Co capping layers for Cu/low-k interconnects
Yang, C. -C.
Flaitz, P.
Li, B.
Chen, F.
Christiansen, C.
Lee, S. -Y.
Ma, P.
Edelstein, D.
MICROELECTRONIC ENGINEERING, 2012, 92 : 79 - 82

← 1 2 3 4 5 →