Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects

被引：7
|
作者：
Suh, BS [1 ]
Choi, SM [1 ]
Wee, Y [1 ]
Lee, JE [1 ]
Lee, J [1 ]
Lee, SJ [1 ]
Lee, SG [1 ]
Shin, H [1 ]
Lee, NI [1 ]
Kang, HK [1 ]
Suh, K [1 ]
机构：
[1] Samsung Elect Co Ltd, Syst LSI Div, Adv Proc Dev Team, Youngin City 449711, Gyeonggi Do, South Korea
来源：
PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2005年
关键词：
D O I：
10.1109/IITC.2005.1499955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step anneal procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.
引用
收藏
页码：138 / 140
页数：3
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