Low Temperature (400 °C) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications

被引：0
|
作者：
Kim, Si Joon [1 ]
Narayan, Dushyant [1 ]
Lee, Jae-Gil [1 ]
Mohan, Jaidah [1 ]
Lee, Joy S. [1 ]
Lee, Jaebeom [1 ]
Young, Chadwin D. [1 ]
Kim, Jiyoung [1 ]
Summerfelt, Scott R. [2 ]
San, Tamer [2 ]
Colombo, Luigi [2 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA
[2] Texas Instruments Inc, Dallas, TX USA
来源：
2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年
关键词：
ferroelectric random access memory (FRAM); ferroelectric thin films; Hf0.5Zr0.5O2; atomic layer deposition;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400 degrees C for 60 s in an N-2 atmosphere after TiN top electrode deposition showed large switching polarization (similar to 45 mu C/cm(2)) and low ferroelectric saturation voltage (similar to 1.5 V) from pulse write/read measurement. Furthermore, fatigue measurements were performed and no significant degradation was observed until 108 switching cycles at 2 V.
引用
收藏
页码：64 / 67
页数：4
相关论文
共 50 条
  • [31] Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors
    Min, Dae-Hong
    Kang, Seung Youl
    Moon, Seung-Eon
    Yoon, Sung-Min
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (07) : 1032 - 1035
  • [32] Ferroelectric Characterization in Ultrathin Hf0.5Zr0.5O2 MFIS Capacitors by Piezoresponse Force Microscopy (PFM) in Vacuum
    Wu, Cheng-Hung
    Useinov, Artur
    Wu, Tian-Li
    Su, Chun-Jung
    2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), 2021,
  • [33] Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K
    Hur, Jae
    Luo, Yuan-Chun
    Wang, Zheng
    Lombardo, Sarah
    Khan, Asif Islam
    Yu, Shimeng
    IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2021, 7 (02): : 168 - 174
  • [34] Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
    Lu, Haidong
    Kim, Dong-Jik
    Aramberri, Hugo
    Holzer, Marco
    Buragohain, Pratyush
    Dutta, Sangita
    Schroeder, Uwe
    Deshpande, Veeresh
    Iniguez, Jorge
    Gruverman, Alexei
    Dubourdieu, Catherine
    NATURE COMMUNICATIONS, 2024, 15 (01)
  • [35] On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
    Fengler, F. P. G.
    Hoffmann, M.
    Slesazeck, S.
    Mikolajick, T.
    Schroeder, U.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (20)
  • [36] Ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(111)
    Song, Tingfeng
    Estandia, Saul
    Dix, Nico
    Gazquez, Jaume
    Gich, Marti
    Fina, Ignasi
    Sanchez, Florencio
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (21) : 8407 - 8413
  • [37] Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
    Kim, Si Joon
    Mohan, Jaidah
    Summerfelt, Scott R.
    Kim, Jiyoung
    JOM, 2019, 71 (01) : 246 - 255
  • [38] Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
    Si Joon Kim
    Jaidah Mohan
    Scott R. Summerfelt
    Jiyoung Kim
    JOM, 2019, 71 : 246 - 255
  • [39] Highly Stable Epitaxially Crystallized Ferroelectric Hf0.5Zr0.5O2 Films
    Lyu, Xueliang
    Song, Tingfeng
    Quintana, Alberto
    Fina, Ignasi
    Sanchez, Florencio
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (11) : 6142 - 6148
  • [40] On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
    2018, American Institute of Physics Inc. (123)
12345