Low Temperature (400 °C) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications

被引：0
|
作者：
Kim, Si Joon [1 ]
Narayan, Dushyant [1 ]
Lee, Jae-Gil [1 ]
Mohan, Jaidah [1 ]
Lee, Joy S. [1 ]
Lee, Jaebeom [1 ]
Young, Chadwin D. [1 ]
Kim, Jiyoung [1 ]
Summerfelt, Scott R. [2 ]
San, Tamer [2 ]
Colombo, Luigi [2 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA
[2] Texas Instruments Inc, Dallas, TX USA
来源：
2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年
关键词：
ferroelectric random access memory (FRAM); ferroelectric thin films; Hf0.5Zr0.5O2; atomic layer deposition;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400 degrees C for 60 s in an N-2 atmosphere after TiN top electrode deposition showed large switching polarization (similar to 45 mu C/cm(2)) and low ferroelectric saturation voltage (similar to 1.5 V) from pulse write/read measurement. Furthermore, fatigue measurements were performed and no significant degradation was observed until 108 switching cycles at 2 V.
引用
收藏
页码：64 / 67
页数：4
相关论文
共 50 条
  • [11] The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films
    Perevalov, Timofey, V
    Prosvirin, Igor P.
    Suprun, Evgenii A.
    Mehmood, Furqan
    Mikolajick, Thomas
    Schroeder, Uwe
    Gritsenko, Vladimir A.
    JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2021, 6 (04): : 595 - 600
  • [12] Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
    Kim, Si Joon
    Mohan, Jaidah
    Kim, Harrison Sejoon
    Lee, Jaebeom
    Hwang, Su Min
    Narayan, Dushyant
    Lee, Jae-Gil
    Young, Chadwin D.
    Colombo, Luigi
    Goodman, Gary
    Wan, Alan S.
    Cha, Pil-Ryung
    Summerfelt, Scott R.
    San, Tamer
    Kim, Jiyoung
    APPLIED PHYSICS LETTERS, 2019, 115 (18)
  • [13] Investigation of Hf0.5Zr0.5O2 Ferroelectric Film sat Low Thermal Budget (300°C)
    Dai, Saifei
    Chai, Junshuai
    Duan, Jiahui
    Xiang, Jinjuan
    Han, Kai
    Wang, Yanrong
    Xu, Hao
    Zhang, Jing
    Wang, Xiaolei
    Wang, Wenwu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 5150 - 5155
  • [14] Temperature dependent polarization -switching behavior in Hf0.5Zr0.5O2 ferroelectric film
    Chen, Haiyan
    Tang, Lin
    Liu, Leyang
    Chen, Yonghong
    Luo, Hang
    Yuan, Xi
    Zhang, Dou
    MATERIALIA, 2020, 14
  • [15] Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing
    Toprasertpong, Kasidit
    Tahara, Kento
    Fukui, Taichiro
    Lin, Zaoyang
    Watanabe, Kouhei
    Takenaka, Mitsuru
    Takagi, Shinichi
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (10) : 1588 - 1591
  • [16] Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
    Kim, Si Joon
    Mohan, Jaidah
    Kim, Harrison Sejoon
    Lee, Jaebeom
    Young, Chadwin D.
    Colombo, Luigi
    Summerfelt, Scott R.
    San, Tamer
    Kim, Jiyoung
    APPLIED PHYSICS LETTERS, 2018, 113 (18)
  • [17] Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature
    Xu, Jiacheng
    Shen, Rongzong
    Qian, Haoji
    Lin, Gaobo
    Gu, Jiani
    Rong, Jian
    Liu, Huan
    Ding, Yian
    Zhang, Miaomiao
    Liu, Yan
    Jin, Chengji
    Chen, Jiajia
    Han, Genquan
    JOURNAL OF APPLIED PHYSICS, 2024, 136 (10)
  • [18] Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
    Lyu, Jike
    Fina, Ignasi
    Fontcuberta, Josep
    Sanchez, Florencio
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (06) : 6224 - 6229
  • [19] Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance
    Alcala, Ruben
    Mehmood, Furgan
    Vishnumurthy, Pramoda
    Mittmann, Terence
    Mikolajick, Thomas
    Schroeder, Uwe
    2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022), 2022, : 42 - 45
  • [20] Ferroelectric switching behavior of nanoscale Hf0.5Zr0.5O2 grains
    Chen, Qiang
    Zhang, Yuke
    Liu, Wenyan
    Jiang, Jie
    Yang, Qiong
    Jiang, Limei
    INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES, 2021, 212
12345