Low Temperature (400 °C) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications

被引：0

作者：

Kim, Si Joon ^{[1
]}

Narayan, Dushyant ^{[1
]}

Lee, Jae-Gil ^{[1
]}

Mohan, Jaidah ^{[1
]}

Lee, Joy S. ^{[1
]}

Lee, Jaebeom ^{[1
]}

Young, Chadwin D. ^{[1
]}

Kim, Jiyoung ^{[1
]}

Summerfelt, Scott R. ^{[2
]}

San, Tamer ^{[2
]}

Colombo, Luigi ^{[2
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

[2] Texas Instruments Inc, Dallas, TX USA

来源：

2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年

关键词：

ferroelectric random access memory (FRAM); ferroelectric thin films; Hf0.5Zr0.5O2; atomic layer deposition;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400 degrees C for 60 s in an N-2 atmosphere after TiN top electrode deposition showed large switching polarization (similar to 45 mu C/cm(2)) and low ferroelectric saturation voltage (similar to 1.5 V) from pulse write/read measurement. Furthermore, fatigue measurements were performed and no significant degradation was observed until 108 switching cycles at 2 V.

引用

页码：64 / 67

页数：4

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