Low Temperature (400 °C) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications

被引：0
|
作者：
Kim, Si Joon [1 ]
Narayan, Dushyant [1 ]
Lee, Jae-Gil [1 ]
Mohan, Jaidah [1 ]
Lee, Joy S. [1 ]
Lee, Jaebeom [1 ]
Young, Chadwin D. [1 ]
Kim, Jiyoung [1 ]
Summerfelt, Scott R. [2 ]
San, Tamer [2 ]
Colombo, Luigi [2 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA
[2] Texas Instruments Inc, Dallas, TX USA
来源：
2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年
关键词：
ferroelectric random access memory (FRAM); ferroelectric thin films; Hf0.5Zr0.5O2; atomic layer deposition;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400 degrees C for 60 s in an N-2 atmosphere after TiN top electrode deposition showed large switching polarization (similar to 45 mu C/cm(2)) and low ferroelectric saturation voltage (similar to 1.5 V) from pulse write/read measurement. Furthermore, fatigue measurements were performed and no significant degradation was observed until 108 switching cycles at 2 V.
引用
收藏
页码：64 / 67
页数：4
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