Barrier reliability of ALD TaN on sub-100 nm copper low-k interconnects

被引：0

作者：

Tokei, Z ^{[1
]}

Gailledrat, T ^{[1
]}

Li, YL ^{[1
]}

Schuhmacher, J ^{[1
]}

Mandrekar, T ^{[1
]}

Guggilla, S ^{[1
]}

Mebarki, B ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RC-delay performance and barrier reliability of an ALD TaN + PVD flash barrier was compared to PVD only barriers. The integration of an ALD TaN + PVD flash barrier results in lower leakage current than PVD schemes both at room temperature and at elevated temperature. Time Dependent Dielectric Breakdown experiments showed that an ALD + PVD flash barrier integrated with an SiOC:H low-k material leads to an interconnect lifetime above 10 years.

引用

页码：801 / 805

页数：5

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