Reliability characterization of ALD TaN barrier for Cu interconnects

被引：0

作者：

Saitoh, T ^{[1
]}

Ishikawa, K ^{[1
]}

Noguchi, J ^{[1
]}

Miyauchi, M ^{[1
]}

Tsugane, K ^{[1
]}

Sasajima, K ^{[1
]}

Kubo, M ^{[1
]}

Oshima, T ^{[1
]}

Satoh, A ^{[1
]}

Iwasaki, J ^{[1
]}

Haba, T ^{[1
]}

Saito, T ^{[1
]}

机构：

[1] Hitachi Ltd, Micro Device Div, Tokyo 1988512, Japan

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer deposition (ALD) of TaN was studied as a barrier metal for dual damascene copper interconnection. ALD TaN barrier has good performance of via resistance because of its excellent step coverage. By using this process, more than 50% reduction of median via resistance was achieved. However, it was found that the Cu interconnect with ALD TaN barrier had poor performance of stress migration tested at 175 degrees C. We solved this problem by combining ALD TaN barrier with sputtered Ta barrier without via resistance increase. It will be expected as an alternative technology for advanced Cu interconnects.

引用

页码：687 / 692

页数：6

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