Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

被引：4
|
作者：
Zerov, VY [1 ]
Kulikov, YV
Malyarov, VG
Feoktistov, NA
Khrebtov, IA
机构：
[1] SI Vavilov State Opt Inst, St Petersburg, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1261722
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method of fabricating uncooled thermally sensitive sandwich structures based on amorphous hydrated silicon films is discussed and experimental results are reported. The structures have an area of 10(-4) cm(2), a resistance of congruent to 10 k Ohm, and a temperature coefficient of resistance similar or equal to 2%/K. At 30 Hz and a current of similar or equal to 1 mu A, the excess noise exceeds the thermal resistance noise by a factor of 1.7. (C) 1997 American Institute of Physics. [S1063-7850(97)02706-7].
引用
收藏
页码：481 / 483
页数：3
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