Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

被引：4

作者：

Zerov, VY ^{[1
]}

Kulikov, YV

Malyarov, VG

Feoktistov, NA

Khrebtov, IA

机构：

[1] SI Vavilov State Opt Inst, St Petersburg, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1261722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of fabricating uncooled thermally sensitive sandwich structures based on amorphous hydrated silicon films is discussed and experimental results are reported. The structures have an area of 10(-4) cm(2), a resistance of congruent to 10 k Ohm, and a temperature coefficient of resistance similar or equal to 2%/K. At 30 Hz and a current of similar or equal to 1 mu A, the excess noise exceeds the thermal resistance noise by a factor of 1.7. (C) 1997 American Institute of Physics. [S1063-7850(97)02706-7].

引用

页码：481 / 483

页数：3

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