Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

被引：3

作者：

Crespo-Yepes, Albert ^{[1
]}

Martin-Martinez, Javier ^{[1
]}

Rothschild, Aude ^{[2
]}

Rodriguez, Rosana ^{[1
]}

Nafria, Montserrat ^{[1
]}

Aymerich, Xavier ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2011年 / 11卷 / 01期

关键词：

BD reversibility; CMOS; dielectric breakdown (BD); high-k; reliability; resistive switching (RS);

D O I：

10.1109/TDMR.2010.2098032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The injected charge to recovery (Q(R)) is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high-k hafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of Q(R) on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed.

引用

页码：126 / 130

页数：5

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