Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

被引：3
|
作者：
Crespo-Yepes, Albert [1 ]
Martin-Martinez, Javier [1 ]
Rothschild, Aude [2 ]
Rodriguez, Rosana [1 ]
Nafria, Montserrat [1 ]
Aymerich, Xavier [1 ]
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
[2] IMEC, B-3001 Louvain, Belgium
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2011年 / 11卷 / 01期
关键词：
BD reversibility; CMOS; dielectric breakdown (BD); high-k; reliability; resistive switching (RS);
D O I：
10.1109/TDMR.2010.2098032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The injected charge to recovery (Q(R)) is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high-k hafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of Q(R) on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed.
引用
收藏
页码：126 / 130
页数：5
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