Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

被引：3

作者：

Crespo-Yepes, Albert ^{[1
]}

Martin-Martinez, Javier ^{[1
]}

Rothschild, Aude ^{[2
]}

Rodriguez, Rosana ^{[1
]}

Nafria, Montserrat ^{[1
]}

Aymerich, Xavier ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2011年 / 11卷 / 01期

关键词：

BD reversibility; CMOS; dielectric breakdown (BD); high-k; reliability; resistive switching (RS);

D O I：

10.1109/TDMR.2010.2098032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The injected charge to recovery (Q(R)) is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high-k hafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of Q(R) on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed.

引用

页码：126 / 130

页数：5

共 50 条

[1] Dielectric breakdown mechanism of HfSiON/SiO2 gate dielectric
Torii, K
Aoyama, T
Kamiyama, S
Tamura, Y
Miyazaki, S
Kitajima, H
Arikado, T
2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 112 - 113
[2] Ultrathin gate-oxide breakdown - Reversibility at low voltage
Cheung, KR
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (01) : 67 - 74
[3] Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Hirano, Izumi
Yamaguchi, Takeshi
Nakasaki, Yasushi
Iijima, Ryosuke
Sekine, Katsuyuki
Takayanagi, Mariko
Eguchi, Kazuhiro
Mitani, Yuichiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
[4] Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs
Choi, Do-Young
Lee, Kyong Taek
Baek, Chang-Ki
Sohn, Chang Woo
Sagong, Hyun Chul
Jung, Eui-Young
Lee, Jeong-Soo
Jeong, Yoon-Ha
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1319 - 1321
[5] Effects of electron current and hole current on dielectric breakdown in HfSiON gate stacks
Hirano, Izumi
Yamaguchi, Takeshi
Nakasaki, Yasushi
Iijima, Ryosuke
Sekine, Katsuyuki
Takayanagi, Mariko
Eguchi, Kazuhiro
Mitani, Yuichiro
Japanese Journal of Applied Physics, 2012, 51 (4 PART 1):
[6] Dielectric breakdown and charge trapping of ultrathin ZrHfO/SiON high-k gate stacks
Wan, Rui
Yan, Jiong
Kuo, Yue
Lu, Jiang
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) : 1639 - 1641
[7] Temperature-accelerated dielectric breakdown in ultrathin gate oxides
Chen, CC
Chang, CY
Chien, CH
Huang, TY
Lin, HC
Liang, MS
APPLIED PHYSICS LETTERS, 1999, 74 (24) : 3708 - 3710
[8] Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High-k Gate Stacks
Crespo-Yepes, A.
Martin-Martinez, J.
Rothschild, A.
Rodriguez, R.
Nafria, M.
Aymerich, X.
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) : 543 - 545
[9] Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis
Doh, SJ
Lee, JH
Kim, JP
Lee, JH
Kim, YS
Lim, HJ
Jung, HS
Han, SK
Kim, MJ
Lee, NI
Kang, HK
Park, G
Kang, SB
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 630 - 631
[10] Dual Nature of Metal Gate Electrode Effects on BTI and Dielectric Breakdown in TaC/HfSiON MISFETs
Fukatsu, Shigeto
Hirano, Izumi
Tatsumura, Kosuke
Masada, Akiko
Fujii, Shosuke
Mitani, Yuichiro
Goto, Masakazu
Inumiya, Seiji
Nakajima, Kazuaki
Kawanaka, Shigeru
Aoyama, Tomonori
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, : 367 - +

← 1 2 3 4 5 →