Nonvolatile operation of vertical ferroelectric gate-all-around nanowire transistors

被引：5

作者：

Fujisawa, Hironori ^{[1
]}

Ikeda, Kazuma ^{[1
]}

Nakashima, Seiji ^{[1
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Shosha 2167, Himeji, Hyogo 6712280, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / SF期

基金：

日本学术振兴会;

关键词：

ferroelectric thin films; nanowire transistors; ferroelectric gate-all-around transistors; ferroelectric memories; FIELD-EFFECT TRANSISTOR; FET;

D O I：

10.35848/1347-4065/ac127c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric gate-all-around (GAA) transistors with a nanowire (NW) channel standing vertically on the substrate would be a potential breakthrough to overcome limitations in the high-integration of ferroelectric memories. In the present study, we fabricated vertical ferroelectric GAA NW transistors (VFGAANWTs) with ZnO NWs (average diameters: 53-193 nm) as the channel, (Hf,Zr)O-2 film (average thicknesses: 9.3-58 nm) as the gate ferroelectric, and Ti as the gate electrode. The channel length was 100-300 nm. The VFGAANWTs showed n-channel operation with on/off ratios of similar to 10, and their on/off states were retained for at least 2 min by the ferroelectric polarization of (Hf,Zr)O-2 after the gate bias was removed, demonstrating the nonvolatile electric field effect in the VFGAANWTs. The results confirm the strong potential of the VFGAANWTs in high-density ferroelectric memory applications.

引用

页数：6

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