Electron Tomography of Gate-All-Around Nanowire Transistors

被引：8
|
作者：
Cherns, P. D. [1 ]
Lorut, F. [2 ]
Dupre, C. [1 ]
Tachi, K. [1 ]
Cooper, D. [1 ]
Chabli, A. [1 ,2 ]
Ernst, T. [1 ]
机构：
[1] CEA, LETI, MINATEC, F-38054 Grenoble, France
[2] ST Microelect, F-38926 Crolles, France
来源：
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷
关键词：
D O I：
10.1088/1742-6596/209/1/012046
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
We present a study of gate-all-around (GAA) Si nanowire transistor structures using high angle annular dark field (HAADF) STEM tomography Device structures have been prepared m needle shaped samples using a focused ion beam (FIB), in order to allow sample rotation to +/- 80 degrees Tomograms are presented, both from a full three channel device structure and also from a single wire test structure, without the hydrogen annealing step It is observed that hydrogen annealing alters the rectangular cross section of the nanowires, narrowing them and smoothing the corners
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页数：4
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