Performance and Reliability of High-Mobility Si0.55Ge0.45 p-Channel FinFETs based on Epitaxial Cladding of Si Fins

被引：0

作者：

Mertens, H. ^{[1
]}

Ritzenthaler, R. ^{[1
]}

Hikavyy, A. ^{[1
]}

Franco, J. ^{[1
]}

Lee, J. W. ^{[1
]}

Brunco, D. P. ^{[2
]}

Eneman, G. ^{[1
]}

Witters, L. ^{[1
]}

Mitard, J. ^{[1
]}

Kubicek, S. ^{[1
]}

Devriendt, K. ^{[1
]}

Tsvetanova, D. ^{[1
]}

Milenin, A. P. ^{[1
]}

Vrancken, C. ^{[1
]}

Geypen, J. ^{[1
]}

Bender, H. ^{[1
]}

Groeseneken, G. ^{[1
]}

Vandervorst, W. ^{[1
]}

Barla, K. ^{[1
]}

Collaert, N. ^{[1
]}

Horiguchi, N. ^{[1
]}

Thean, A. V-Y ^{[1
]}

机构：

[1] IMEC, Leuven, Belgium

[2] GLOBALFOUNDRIES, Malta, NY USA

来源：

2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a comprehensive study of Si0.55Ge0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit similar to 2x higher hole mobility, similar to 2x better I-ON/I-OFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive current and hole mobility on both SiGe thickness and device width are examined in detail. This analysis shows that SiGe thickness conformality and epitaxial facet control are crucial for the optimization of SiGe-cladded FinFETs.

引用

页数：2

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