Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn

被引：1
|
作者：
Suzuki, Naoki [1 ]
Kouyama, Kazuaki [1 ,3 ]
Insose, Yuta [1 ]
Kunugita, Hideyuki [1 ,3 ]
Ema, Kazuhiro [1 ,3 ]
Sekiguchi, Hiroto [2 ,3 ]
Kikuchi, Akihiko [2 ,3 ]
Kisino, Katumi [2 ,3 ]
机构：
[1] Sophia Univ, Dept Phys, 7-1 Chiyoda Ku, Tokyo 1028554, Japan
[2] Sophia Univ, Dept Elect & Elect Engn, Tokyo, Japan
[3] JST, CREST, Tokyo, Japan
来源：
2008 INTERNATIONAL CONFERENCE ON LUMINESCENCE AND OPTICAL SPECTROSCOPY OF CONDENSED MATTER | 2009年 / 2卷 / 02期
关键词：
Nano crystal; MULTIPLE-QUANTUM WELLS; GAN NANOCOLUMNS; EMISSION; EXCITON;
D O I：
10.1016/j.phpro.2009.07.015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the emission mechanism of InGaN/GaN nanocolumns. We extracted only the effect of localized states and investigated the difference between InGaN/GaN single-quantum-disc ( SQD) and InGaN nanocolumns by means of photoluminescence and photoluminescence excitation measurements. The difference between the localized states was interpreted by the band tail model. We conclude that the InGaN nanocolumn has widely distributed localized states, while the InGaN/GaN SQD has a single localized state.
引用
收藏
页码：327 / 333
页数：7
相关论文
共 50 条
  • [41] Near-field optical imaging of light localization in GaN nanocolumn system
    Sakai, Masaru
    Inose, Yuta
    Ohtsuki, Tomi
    Ema, Kazuhiro
    Kishino, Katsumi
    Saiki, Toshiharu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (03)
  • [42] Optical metastability in InGaN/GaN heterostructures
    Shmagin, IK
    Muth, JF
    Kolbas, RM
    Dupuis, RD
    Grudowski, PA
    Eiting, CJ
    Park, J
    Shelton, BS
    Lambert, DJH
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 375 - 378
  • [43] Optical metastability in InGaN/GaN heterostructures
    Shmagin, IK
    Muth, JF
    Kolbas, RM
    Dupuis, RD
    Grudowski, PA
    Eiting, CJ
    Park, J
    Shelton, BS
    Lambert, DJH
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 375 - 378
  • [44] The structural properties of GaN/AlN core-shell nanocolumn heterostructures
    Hestroffer, K.
    Mata, R.
    Camacho, D.
    Leclere, C.
    Tourbot, G.
    Niquet, Y. M.
    Cros, A.
    Bougerol, C.
    Renevier, H.
    Daudin, B.
    NANOTECHNOLOGY, 2010, 21 (41)
  • [45] Optical Properties of Silicon-doped InGaN and GaN Layers
    KANG Ling
    SemiconductorPhotonicsandTechnology, 2004, (04) : 248 - 251
  • [46] Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN
    Osinski, M
    Eliseev, PG
    Lee, J
    Smagley, VA
    Sugahara, T
    Sakai, S
    DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES, 1999, 3896 : 86 - 97
  • [47] Optical properties of InGaN/GaN multi quantum well structures
    Bergman, JP
    Saksulv, N
    Dalfors, J
    Holtz, PO
    Monemar, B
    Amano, H
    Akasaki, I
    NITRIDE SEMICONDUCTORS, 1998, 482 : 631 - 636
  • [48] Formation and optical properties of selectively grown InGaN/GaN nanostructures
    Wang, J
    Nozaki, M
    Ishikawa, Y
    Lachab, M
    Fareed, RSQ
    Wang, T
    Sakai, S
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 829 - 832
  • [49] Red Emission of Well-Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective-Area Growth
    Hoshino, Kota
    Togashi, Rie
    Kishino, Katsumi
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (11):
  • [50] Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
    Li, X.
    Zhao, D. G.
    Yang, J.
    Jiang, D. S.
    Liu, Z. S.
    Chen, P.
    Zhu, J. J.
    Liu, W.
    He, X. G.
    Li, X. J.
    Liang, F.
    Zhang, L. Q.
    Liu, J. P.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 97 : 186 - 192
12345