Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn

被引：1
|
作者：
Suzuki, Naoki [1 ]
Kouyama, Kazuaki [1 ,3 ]
Insose, Yuta [1 ]
Kunugita, Hideyuki [1 ,3 ]
Ema, Kazuhiro [1 ,3 ]
Sekiguchi, Hiroto [2 ,3 ]
Kikuchi, Akihiko [2 ,3 ]
Kisino, Katumi [2 ,3 ]
机构：
[1] Sophia Univ, Dept Phys, 7-1 Chiyoda Ku, Tokyo 1028554, Japan
[2] Sophia Univ, Dept Elect & Elect Engn, Tokyo, Japan
[3] JST, CREST, Tokyo, Japan
来源：
2008 INTERNATIONAL CONFERENCE ON LUMINESCENCE AND OPTICAL SPECTROSCOPY OF CONDENSED MATTER | 2009年 / 2卷 / 02期
关键词：
Nano crystal; MULTIPLE-QUANTUM WELLS; GAN NANOCOLUMNS; EMISSION; EXCITON;
D O I：
10.1016/j.phpro.2009.07.015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the emission mechanism of InGaN/GaN nanocolumns. We extracted only the effect of localized states and investigated the difference between InGaN/GaN single-quantum-disc ( SQD) and InGaN nanocolumns by means of photoluminescence and photoluminescence excitation measurements. The difference between the localized states was interpreted by the band tail model. We conclude that the InGaN nanocolumn has widely distributed localized states, while the InGaN/GaN SQD has a single localized state.
引用
收藏
页码：327 / 333
页数：7
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