Optical metastability in InGaN/GaN heterostructures

被引：0
|
作者：
Shmagin, IK [1 ]
Muth, JF [1 ]
Kolbas, RM [1 ]
Dupuis, RD [1 ]
Grudowski, PA [1 ]
Eiting, CJ [1 ]
Park, J [1 ]
Shelton, BS [1 ]
Lambert, DJH [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light temporaryly changes the optical properties of the InGaN/GaN epitaxial layer. The photo-induced changes wee used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced patterns were viewed under low-intensity illumination with UV light from the same light source.
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页码：375 / 378
页数：4
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