Optical metastability in InGaN/GaN heterostructures

被引：0

作者：

Shmagin, IK ^{[1
]}

Muth, JF ^{[1
]}

Kolbas, RM ^{[1
]}

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Park, J ^{[1
]}

Shelton, BS ^{[1
]}

Lambert, DJH ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light temporaryly changes the optical properties of the InGaN/GaN epitaxial layer. The photo-induced changes wee used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced patterns were viewed under low-intensity illumination with UV light from the same light source.

引用

页码：375 / 378

页数：4

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