Extremely-scaled double-gate CMOS with non-self-aligned back gate

被引：0
|
作者：
Kim, K [1 ]
Hanafi, HI [1 ]
Cai, J [1 ]
Chuang, CT [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
2005 IEEE VLSI-TSA INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TSA-TECH), PROCEEDINGS OF TECHNICAL PAPERS | 2005年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：110 / 111
页数：2
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