Non-Planar Device Architecture for 15nm Node: FinFET or Trigate?

被引：0
|
作者：
Lin, Chung-Hsun [1 ]
Chang, Josephine [1 ]
Guillorn, Michael [1 ]
Bryant, Andres [1 ]
Oldiges, Phil [2 ]
Haensch, Wilfried [1 ]
机构：
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Syst Technol Grp, Fishkill, NY 12533 USA
来源：
2010 IEEE INTERNATIONAL SOI CONFERENCE | 2010年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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