An embedded MOS model 9 for CMOS RF circuit design

This article presents an n-channel MOS transistor model for the simulation of CMOS RF circuits in the gigahertz range. This model is based on a MOS model 9 (MM9) compact transistor model, embedded in a network describing device parasitics, The parasitics network consists of six resistors, five capacitors and two JUNCAP diode models. Methods for device characterization and determination Of the parasitics are presented. A model, developed for a 0.25 mum CAMS technology, shows good accuracy in the measured frequency range tip to 12 GHz and over a wide bias range. By applying simple rules for the scaling of parasitics and a unit transistor layout approach, the model also shows excellent scalability with respect to device width. It also predicts intermodulation products with fair accuracy.