Advanced Gate and Stack Dielectric Characterization with FastGate® Technology

In this paper a non-damaging and non-contaminating method for performing Capacitance-Voltage (CV) and Current-Voltage (IV) electrical characterization of advanced gate dielectrics and stack capacitor films is presented. The method uses a contacting Elastic Material Probe (EM-Probe) that is made of a semiconductor compatible material and forms a gate contact diameter of about 30 to 50 microns. Key electrical parameters that are measured are, Capacitive Effective Thickness (CET), Equivalent Oxide Thickness (EOT), Interface Trap Density (D-it) delta V-FB Hysteresis (Delta V-FB), leakage current density (J(LK)), Field-to-breakdown (F-BD), Charge-to-breakdown (Q(BD)) and Stress Induced Leakage Current (SILC). Measurements can be made on either blanket or in scribe line test areas in patterned wafers.