A curvature-compensated CMOS bandgap with negative feedback technique

被引：5

作者：

Li, Xiaochao ^{[1
]}

Zhou, Liangxi ^{[1
]}

Chen, Yihui ^{[1
]}

Zhang, Ying ^{[1
]}

Cao, Chunhui ^{[1
]}

Guo, Donghui ^{[1
]}

机构：

[1] Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2016年 / 52卷

关键词：

Bandgap reference; Temperature coefficient; Power supply rejection; Negative feedback; VOLTAGE REFERENCE; SUPPLY VOLTAGE; BICMOS BANDGAP;

D O I：

10.1016/j.mejo.2016.03.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper propose a novel high-order curvature-corrected CMOS bandgap reference (BGR) utilizing the negative feedback structure. The innovative negative feedback bandgap core not only compensates the exponential nonlinearity of VBE but also improves the power supply rejection ratio (PSRR) and line regulation. The proposed BGR is analyzed and implemented in 0.35-mu m CMOS process. Experimental results of the BGR indicate that a minimum temperature coefficient (TC) of 13 ppm/degrees C @-40 degrees C to 180 degrees C, a PSRR of -64 dB @ 100 Hz, and the 5.2 uV/V line regulation (LNR) from 3V to 3.6V supply voltage at room temperature. The active area of the presented BGR is 133 mu m x 300 mu m. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：104 / 110

页数：7

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