Nanoscale electrical characterization of HfO2/SiO2 MOS gate stacks with enhanced -: CAFM

被引：0
|
作者：
Nafría, J [1 ]
Blasco, X [1 ]
Porti, M [1 ]
Aguilera, L [1 ]
Aymerich, X [1 ]
Petry, J [1 ]
Vandervorst, W [1 ]
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain
来源：
2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The conduction and dielectric breakdown (BD) of an ultra-thin HfO2/SiO2 gate stack is studied at the nanoscale. With this purpose, an Enhanced Conductive Atomic Force Microscope (a CAFM with extended electrical performance) has been developed. Using this new set up, different conduction modes have been observed before BD, which can be masked during standard tests. The study of the BD spots has revealed that, as for SiO2, the BD of the stack leads to modifications in the topography images and high conductive spots in the current images.
引用
收藏
页码：65 / 68
页数：4
相关论文
共 50 条
  • [41] Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
    Xu, Z
    Houssa, M
    De Gendt, S
    Heyns, M
    APPLIED PHYSICS LETTERS, 2002, 80 (11) : 1975 - 1977
  • [42] Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates
    Li, Xue-Fei
    Liu, Xiao-Jie
    Fu, Ying-Ying
    Li, Ai-Dong
    Zhang, Wen-Qi
    Li, Hui
    Wu, Di
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (01):
  • [43] On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks
    Kar, Samares
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (03) : N30 - N38
  • [44] Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
    Zhao, CZ
    Zahid, MB
    Zhang, JF
    Groeseneken, G
    Degraeve, R
    De Gendt, S
    MICROELECTRONIC ENGINEERING, 2005, 80 : 366 - 369
  • [45] Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
    Houssa, M
    De Jaeger, B
    Delabie, A
    Van Elshocht, S
    Afanas'ev, VV
    Autran, JL
    Stesmans, A
    Meuris, M
    Heyns, MM
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (21-23) : 1902 - 1905
  • [46] Interfacial SiO2 scavenging kinetics in HfO2 gate stack
    Li, Xiuyan
    Nishimura, Tomonori
    Toriumi, Akira
    APPLIED PHYSICS LETTERS, 2016, 109 (20)
  • [47] Charge trapping in SiO2/HfO2/TiN gate stack
    Lime, F
    Ghibaudo, G
    Guillaumot, B
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1445 - 1448
  • [48] Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
    Fujimura, Nobuyuki
    Ohta, Akio
    Ikeda, Mitsuhisa
    Makihara, Katsunori
    Miyazaki, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [49] Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
    Iglesias, V.
    Martin-Martinez, J.
    Porti, M.
    Rodriguez, R.
    Nafria, M.
    Aymerich, X.
    Erlbacher, T.
    Rommel, M.
    Murakami, K.
    Bauer, A. J.
    Frey, L.
    Bersuker, G.
    MICROELECTRONIC ENGINEERING, 2013, 109 : 129 - 132
  • [50] On The Use Of Synchrotron Radiation For The Characterization Of "TiN/HfO2" Gate Stacks
    Gaumer, C.
    Martinez, E.
    Lhostis, S.
    Fillot, F.
    Gergaud, P.
    Detlefs, B.
    Roy, J.
    Mi, Y.
    Barnes, J. -P.
    Zegenhagen, J.
    Chabli, A.
    FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 40 - +
12345