Nanoscale electrical characterization of HfO2/SiO2 MOS gate stacks with enhanced -: CAFM

被引：0

作者：

Nafría, J ^{[1
]}

Blasco, X ^{[1
]}

Porti, M ^{[1
]}

Aguilera, L ^{[1
]}

Aymerich, X ^{[1
]}

Petry, J ^{[1
]}

Vandervorst, W ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

来源：

2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conduction and dielectric breakdown (BD) of an ultra-thin HfO2/SiO2 gate stack is studied at the nanoscale. With this purpose, an Enhanced Conductive Atomic Force Microscope (a CAFM with extended electrical performance) has been developed. Using this new set up, different conduction modes have been observed before BD, which can be masked during standard tests. The study of the BD spots has revealed that, as for SiO2, the BD of the stack leads to modifications in the topography images and high conductive spots in the current images.

引用

页码：65 / 68

页数：4

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