THz Spectroscopy of InAs Nanowires

被引：0

作者：

Prabhu, S. S. ^{[1
]}

Chaubal, Alok U. ^{[1
]}

Deshpande, Amey ^{[1
]}

Dhara, Sajal ^{[1
]}

Gokhale, Mahesh ^{[1
]}

Bhattacharya, Arnab ^{[1
]}

Vengurlekar, A. S. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present our investigation of the THz radiation emission from In As nanowires (NW) grown on a GaAs substrate. We also compare the emitted power of the radiation from In As nanowires with a p-InAs crystal, a standard THz emitter. The absolute emitted power from In As nanowires is found to be higher than the THz power emitted from the p-InAs for the same incident power of the infrared excitation. We are investigating the mechanism for this observed power emission enhancement effect.

引用

页码：318 / 319

页数：2

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