THz Spectroscopy of InAs Nanowires

被引：0
|
作者：
Prabhu, S. S. [1 ]
Chaubal, Alok U. [1 ]
Deshpande, Amey [1 ]
Dhara, Sajal [1 ]
Gokhale, Mahesh [1 ]
Bhattacharya, Arnab [1 ]
Vengurlekar, A. S. [1 ]
机构：
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
来源：
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present our investigation of the THz radiation emission from In As nanowires (NW) grown on a GaAs substrate. We also compare the emitted power of the radiation from In As nanowires with a p-InAs crystal, a standard THz emitter. The absolute emitted power from In As nanowires is found to be higher than the THz power emitted from the p-InAs for the same incident power of the infrared excitation. We are investigating the mechanism for this observed power emission enhancement effect.
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页码：318 / 319
页数：2
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