Molecular seam epitaxy of InGaN/GaN heterostructures for green luminescence

被引：0

作者：

Green, DS ^{[1
]}

Heikman, S ^{[1
]}

Heying, B ^{[1
]}

Tavernier, PR ^{[1
]}

Speck, JS ^{[1
]}

Clarke, DR ^{[1
]}

Den Baars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The epitaxial growth of InGaN was investigated by molecular beam epitaxy(MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied.

引用

页码：371 / 376

页数：6

共 50 条

[11] Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy
Titus, J.
Nguyen, H. P. T.
Mi, Z.
Perera, A. G. U.
APPLIED PHYSICS LETTERS, 2013, 102 (12)
[12] Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Kaschner, H
Holst, J
von Gfug, U
Hoffmann, A
Bertram, F
Riemann, T
Rudloff, D
Fischer, P
Christen, J
Averbeck, R
Riechert, H
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
[13] Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Albert, S.
Bengoechea-Encabo, A. M.
Sanchez-Garcia, M. A.
Calleja, E.
III-NITRIDE SEMICONDUCTOR OPTOELECTRONICS, 2017, 96 : 231 - 266
[14] Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
Johnson, MAL
Brown, JD
El-Masry, NA
Cook, JW
Schetzina, JF
Kong, HS
Edmond, JA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1282 - 1285
[15] Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
J Vac Sci Technol B, 3 (1282):
[16] ScAlInN/GaN heterostructures grown by molecular beam epitaxy
Ye, Haotian
Wang, Rui
Yang, Liuyun
Wang, Jinlin
Wang, Tao
Feng, Ran
Xu, Xifan
Lee, Wonseok
Wang, Ping
Wang, Xinqiang
APPLIED PHYSICS LETTERS, 2024, 125 (12)
[17] Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
Tews, H
Averbeck, R
Graber, A
Riechert, H
ELECTRONICS LETTERS, 1996, 32 (21) : 2004 - 2006
[18] Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
Siemens AG, Munich, Germany
Electron Lett, 21 (2004-2006):
[19] Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures
E. V. Lutsenko
M. V. Rzheutski
V. N. Pavlovskii
G. P. Yablonskii
I. Reklaitis
A. Kadys
A. Žukauskas
Journal of Applied Spectroscopy, 2013, 80 : 220 - 225
[20] Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
A. N. Kovalev
F. I. Manyakhin
V. E. Kudryashov
A. N. Turkin
A. É. Yunovich
Semiconductors, 1998, 32 : 54 - 57

← 1 2 3 4 5 →