Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

被引：27
|
作者：
Tews, H
Averbeck, R
Graber, A
Riechert, H
机构：
[1] Siemens AG, Central Research Laboratories
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 21期
关键词：
electroluminescence; gallium nitride; light emitting diodes; molecular beam epitaxial growth;
D O I：
10.1049/el:19961335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Blue and green electroluminescence from GaN/InGaN pn junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths.
引用
收藏
页码：2004 / 2006
页数：3
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