Molecular seam epitaxy of InGaN/GaN heterostructures for green luminescence

被引：0
|
作者：
Green, DS [1 ]
Heikman, S [1 ]
Heying, B [1 ]
Tavernier, PR [1 ]
Speck, JS [1 ]
Clarke, DR [1 ]
Den Baars, SP [1 ]
Mishra, UK [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年
关键词：
D O I：
10.1109/ISCS.2000.947184
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The epitaxial growth of InGaN was investigated by molecular beam epitaxy(MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied.
引用
收藏
页码：371 / 376
页数：6
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