Geant4 simulation of a filtered X-ray source for radiation damage studies

被引：15

作者：

Guthoff, M. ^{[1
]}

Brovchenko, O. ^{[1
]}

de Boer, W. ^{[1
]}

Dierlamm, A. ^{[1
]}

Mueller, T. ^{[1
]}

Ritter, A. ^{[1
]}

Schmanau, M. ^{[1
]}

Simonis, H. -J. ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Expt Kernphys, D-76128 Karlsruhe, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2012年 / 675卷

关键词：

X-ray; Energy spectrum; Silicon drift diode; Geant4;

D O I：

10.1016/j.nima.2012.01.029

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：118 / 122

页数：5

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