Deep Level Transient Spectroscopy study of dislocations in SiGe/Si heterostructures

被引：0

作者：

Lu, Jinggang ^{[1
]}

Park, Yongkook ^{[1
]}

Rozgonyi, George A. ^{[1
]}

机构：

[1] N Carolina State Unive, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA

来源：

SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II | 2007年 / 994卷

关键词：

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Examination of dislocations in the as-grown and annealed SiGe/Si heterostructures by DLTS indicates the three strong DLTS bands from 70 to 270K in the as-grown sample are likely related to intrinsic point defects or dislocation trails. It was found that a small amount of Fe at dislocations dramatically increases their electrical activity, and the trap concentration due to Fe-decorated dislocations can well exceed the total Fe impurities presented along dislocations. Through examining the competitive trapping of Fe at boron and dislocations, it is suggested that Fe trapping only happens at disordered sites along dislocations, such as kinks.

引用

页码：251 / +

页数：2

共 50 条

[21] Electrical behaviour of Al/SiGe/Si heterostructures:: effect of surface treatment and dislocations
Horváth, ZJ
Adám, M
Szabó, I
Orlov, LK
Potapov, A
Tolomasov, VA
APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 54 - 59
[22] Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
Gonzalez, M.
Carlin, A. M.
Dohrman, C. L.
Fitzgerald, E. A.
Ringel, S. A.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
[23] Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations
Voss, S
Stolwijk, NA
Bracht, H
Larsen, AN
Overhof, H
PHYSICAL REVIEW B, 2003, 68 (03)
[24] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF STAEBLER-WRONSKI EFFECT IN A-SI-H
MIYANISHI, A
NAKATA, J
IMAO, S
SHIRAFUJI, J
KUBO, U
INUISHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B): : L243 - L245
[25] Deep level transient spectroscopy study of Staebler-Wronski effect in a-Si:H
Miyanishi, Atsushi, 1600, (30):
[26] Deep level transient spectroscopy investigation of a deep trap in float-zone Si
Londos, C.A.
1600, (75):
[27] Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy
Tran Thien Duc
Pozina, Galia
Amano, Hiroshi
Monemar, Bo
Janzen, Erik
Hemmingsson, Carl
PHYSICAL REVIEW B, 2016, 94 (04)
[28] SELECTIVE ETCHING OF SIGE ON SIGE/SI HETEROSTRUCTURES
CHANG, GK
CARNS, TK
RHEE, SS
WANG, KL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 202 - 204
[29] SI/SIGE HETEROSTRUCTURES AND DEVICES
ZHOU, GL
MORKOC, H
THIN SOLID FILMS, 1993, 231 (1-2) : 125 - 142
[30] Defect characterization in p isotype Si/SiGe/Si heterostructures by space charge spectroscopy
Bremond, G.
Souifi, A.
Degroodt, P.
Warren, P.
Dutartre, D.
Guillot, G.
Materials Science Forum, 1994, 143-4 (pt 1) : 495 - 500

← 1 2 3 4 5 →