Deep Level Transient Spectroscopy study of dislocations in SiGe/Si heterostructures

Examination of dislocations in the as-grown and annealed SiGe/Si heterostructures by DLTS indicates the three strong DLTS bands from 70 to 270K in the as-grown sample are likely related to intrinsic point defects or dislocation trails. It was found that a small amount of Fe at dislocations dramatically increases their electrical activity, and the trap concentration due to Fe-decorated dislocations can well exceed the total Fe impurities presented along dislocations. Through examining the competitive trapping of Fe at boron and dislocations, it is suggested that Fe trapping only happens at disordered sites along dislocations, such as kinks.