A SUPERJUNCTION INSULATED GATE BIPOLAR TRANSISTOR WITH BILATERAL HK INSULATORS: A SOLUTION TO CHARGE IMBALANCE

被引：0
|
作者：
Wei, Hang [1 ]
Jiang, Frank X. C. [1 ]
Lin, Xinnan [1 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
POWER DEVICES; VOLTAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the nip pillars are not only depleted by each other, but also by the bilateral HK capacitors adaptively. Thus the drift region can be fully depleted whether or not there is charge imbalance. The effect is verified by Sentaurus TCAD. The results show that the BV of the proposed device has strong immunity to charge imbalance. In addition, the BHK-SJ-IGBT achieves better trade-off relationship between the blocking voltage(BV) and the specific on-resistance(Ron, sp) than the conventional SJ IGBT(C-SJ-IGBT).
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Sensor for Accumulated Charge Detection in Packaged Insulation Layer of Insulated Gate Bipolar Transistor Power Devices
    Takada, Tatsuo
    Hijikata, Kimio
    Wang, Weiwang
    Inoue, Takashi
    SENSORS AND MATERIALS, 2019, 31 (08) : 2565 - 2578
  • [42] A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal-Oxide-Semiconductor Field-Effect Transistor
    Wu, Lijuan
    Zhang, Banghui
    Deng, Gaoqiang
    Song, Xuanting
    Liu, Heng
    Liu, Qing
    Qiu, Tao
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (03) : 2177 - 2184
  • [43] 600V Insulated Gate Bipolar Transistor Design for Improving Breakdown Voltage in Trench Floating P-Well Charge Storage Layer Gate Bipolar Transistor
    Chan, Lee Chao
    Sheng, Kao Yi
    Keng, Yen Shih
    Rong, Xie Shang
    Tso, Chien Feng
    2024 7TH INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS, AND CONTROL ENGINEERING, ICECC 2024, 2024, : 47 - 54
  • [44] The effect of charge imbalance on superjunction power devices: An exact analytical solution
    Napoli, Ettore
    Wang, Han
    Udrea, Florin
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (03) : 249 - 251
  • [45] INSULATED-GATE FIELD-EFFECT TRANSISTOR - A BIPOLAR TRANSISTOR IN DISGUISE.
    Johnson, E.O.
    1600, (34):
  • [46] A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer
    Wang, Zhigang
    Yang, Chong
    Huang, Xiaobing
    MICROMACHINES, 2023, 14 (03)
  • [47] A novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT)
    Spulber, O
    Narayanan, EMS
    Hardikar, S
    De Souza, MM
    Sweet, M
    Bose, SC
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (11) : 580 - 582
  • [48] A segmented anode, npn controlled lateral insulated gate bipolar transistor
    Hardikar, S
    Xu, YZ
    De Souza, MM
    Narayanan, EMS
    SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1055 - 1058
  • [49] An insulated gate bipolar transistor employing the plugged n+ anode
    Chun, JH
    Lee, BH
    Byeon, DS
    Kim, DY
    Han, MK
    Choi, YI
    MICROELECTRONICS RELIABILITY, 1999, 39 (01) : 29 - 33
  • [50] AN INSIGHTFUL ANALYSIS OF THE HYBRID INSULATED-GATE BIPOLAR-TRANSISTOR
    FOSSUM, JG
    MCDONALD, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) : 1560 - 1562
12345