A SUPERJUNCTION INSULATED GATE BIPOLAR TRANSISTOR WITH BILATERAL HK INSULATORS: A SOLUTION TO CHARGE IMBALANCE

被引：0

作者：

Wei, Hang ^{[1
]}

Jiang, Frank X. C. ^{[1
]}

Lin, Xinnan ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

POWER DEVICES; VOLTAGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the nip pillars are not only depleted by each other, but also by the bilateral HK capacitors adaptively. Thus the drift region can be fully depleted whether or not there is charge imbalance. The effect is verified by Sentaurus TCAD. The results show that the BV of the proposed device has strong immunity to charge imbalance. In addition, the BHK-SJ-IGBT achieves better trade-off relationship between the blocking voltage(BV) and the specific on-resistance(Ron, sp) than the conventional SJ IGBT(C-SJ-IGBT).

引用

页数：3

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