Measurement of Lattice Temperature at Super Junction Planar Gate IGBT Comparing with Conventional Planar Gate IGBT

被引：0

作者：

Joo, Nack Yong ^{[1
]}

Lee, Byeong-il ^{[1
]}

Jung, Eun Sik ^{[2
]}

Sung, Man Young ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[2] Maple Semicond, Seoul 136701, South Korea

来源：

INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL ENGINEERING (MSME 2014) | 2014年

关键词：

Power device; IGBT; Lattice temperature; Super junction; RESISTANCE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Power semiconductors, which is used to electrical switches that demand high breakdown voltage, low on-resistance and high switching speed, have been important devices in modern industry for saving energy. As Power devices control high current level, it generates wholesale heat. Since high temperature changes electrical characteristics of Power device, heat degrades reliability and operation of Power device. Therefore thermal analysis plays an important role in reliability and rapid thermal emission and low heat generation has a good effect on reliability of Power devices. This paper makes a comparison between thermal characteristic of Super junction IGBT and that of conventional IGBT. Thermal analysis is performed by lattice temperature in on state for a gate bias of 10V.

引用

页码：380 / 383

页数：4

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