Less-Conventional Low-Consumption Galvanic Separated MOSFET-IGBT Gate Drive Supply

被引：1

作者：

Bikorimana J.M.V. ^{[1
,2
]}

Van Den Bossche A. ^{[1
,3
]}

机构：

[1] Ghent University, Ghent

[2] University of Rwanda, Butare

[3] Electrical Energy Laboratory, Ghent University, Ghent

来源：

Bikorimana, Jean Marie Vianney (jeanmarievianney.bikorimana@ugent.be) | 1600年 / Hindawi Limited, 410 Park Avenue, 15th Floor, 287 pmb, New York, NY 10022, United States卷 / 2017期

关键词：

Cost effectiveness - Energy efficiency - Capacitance - Personal computing;

D O I：

10.1155/2017/4181549

中图分类号：

学科分类号：

摘要：

A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it has a very low parasitic capacitance between primary and secondary coils, and it is cost-effective. Very low standby losses were observed during lab experiments. This makes it compatible with energy efficient drives and solar inverters. © 2017 Jean Marie Vianney Bikorimana and Alex Van den Bossche.

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