Characterization of nano-meter scale roughness of CVD silicon and silicon dioxide films for 3-D device integration

被引：0
|
作者：
Ilhan, HT [1 ]
Nasrullah, J [1 ]
Linscott, I [1 ]
Tyler, GL [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
A wavelet-based approach for characterization of surface roughness of thin films of Si and SiO2, describes a local sharp variation in atomic force microscope (AFM) scans as a combination of local Holder exponent and summit decay rate. Increased deposition time, in combination with higher nucleation rate, and etched-back low pressure chemical vapor deposition (LPCVD) films result in increasingly smooth summits and less overall roughness. No roughness dependence on surface cleaning method is observed.
引用
收藏
页码：539 / 542
页数：4
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