3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators

被引：0
|
作者：
Schiavone, P. [1 ,2 ]
Martin, M. [2 ]
Alipour, P. [3 ]
Eftekhar, A. [3 ]
Yegnanarayanan, S. [3 ]
Adibi, A. [3 ]
机构：
[1] Georgia Inst Technol, Georgia Tech, CNRS, UMI 2958, 777 Atlantic Dr, Atlanta, GA 30332 USA
[2] CNRS, Lab Technol Microelect, F-38054 Grenoble, France
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年
关键词：
SIDEWALL ROUGHNESS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanophotonic resonators are very sensitive to sidewall roughness. We investigate in detail the sidewall roughness, correlation length and fractal roughness exponent for high Q silicon resonators using a 3D AFM (C) 2010 Optical Society of America
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页数：2
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