Comparison study of lifetime measurement techniques

A comparison study was conducted between three different techniques used to resolve iron contamination in silicon. Fourteen 8 " p-type Si wafers were implanted with iron at seven doses ranging from 1x10(8) to 1x10(12) cm(-2). Ail 14 wafers including monitors were processed through an RTP chamber at 1100 degrees C for 6 min. Oxide thickness was measured on an ellipsometer. The wafers were measured by optical and thermal activation SPV, then the wafers were split in two sets. One set of seven wafers was measured by ELYMAT and the other set was measured by mu-PCD. Two different passivation techniques were used for mu-PCD, oxide and ethanol-iodine passivation. At low implant dose all three techniques have limitations. However mu-PCD shows the highest lifetime. At high Fe concentrations all three techniques tend to agree.