Lifetime study in advanced isolation techniques

被引：2
|
作者：
Poyai, A [1 ]
Simoen, E [1 ]
Claeys, C [1 ]
Rooyackers, R [1 ]
Badenes, G [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期
关键词：
STI; PELOX; lifetime; isolation;
D O I：
10.1016/S1369-8001(00)00165-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of different isolation schemes on the p-n junction characteristics is compared. From the diode current-voltage behaviour, the silicon generation and recombination lifetime is extracted. It will be shown that the recombination lifetime is higher in the case of shallow trench isolation (STI) than in the case of polysilicon encapsulated local oxidation of silicon (PELOX). The opposite trend is observed for the generation lifetime. These results will be discussed in view of the defects present in the p-well of the diodes, which are studied by other spectroscopic and microscopic techniques. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：137 / 139
页数：3
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