Transparent conductive ZnO film preparation by alternating sputtering of ZnO:Al and Zn or Al targets

被引：60

作者：

Tominaga, K ^{[1
]}

Umezu, N ^{[1
]}

Mori, I ^{[1
]}

Ushiro, T ^{[1
]}

Moriga, T ^{[1
]}

Nakabayashi, I ^{[1
]}

机构：

[1] Univ Tokushima, Tokushima 770, Japan

来源：

THIN SOLID FILMS | 1998年 / 334卷 / 1-2期

关键词：

transparent conductive film; ZnO; ZnO : Al; sputtering;

D O I：

10.1016/S0040-6090(98)01112-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multilayered ZnO:Al and ZnO:O-v film was prepared by alternately sputtering ZnO:Al(2% wt.) and Zn targets. The films obtained were optically transparent and had lower resistivity than those prepared by ZnO:Al sputtering. Deposition from the Zn target gave a ZnO film containing native donors (a ZnO:O-v film). The carrier concentration increased in the ZnO:Al/ZnO:O-v multilayered film. Our results cannot be explained by the redistribution of the carrier between ZnO:Al and ZnO:O-v. This result indicates an improvement in the doping efficiency. Multilayered films of ZnO:Al and Al oxide compounds were also prepared. In this case, with increasing thickness of the Al oxide film, a decrease was observed in the carrier mobility, due to the scattering at the interface. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：35 / 39

页数：5

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